Title :
Latchup characterization of high energy ion implanted new CMOS twin wells that comprised the BILLI (buried implanted layer for lateral isolation) and BL/CL (buried layer/connecting layer) structures
Author :
Kim, Jong-Kwan ; Park, Seong-Hyung ; Lee, Young-Jong ; Sung, Yung-Kwon
Author_Institution :
Adv. Tech. Lab., LG Semicon. Ltd., Cheong-Joo, South Korea
Abstract :
We have investigated the latchup characteristics of various CMOS well structures possible with high energy ion implantation processes, including conventional retrograde well, BILLI well and BL/CL structure. We also compare those characteristics with conventional diffused wells in bulk and retrograde wells with STI isolation technology. We show DC latchup characterization results that allow us to evaluate each technology and suggest guidelines for the optimization of latchup hardness
Keywords :
CMOS integrated circuits; characteristics measurement; circuit optimisation; integrated circuit measurement; integrated circuit reliability; ion implantation; isolation technology; BILLI well; CMOS twin wells; DC latchup characterization; STI isolation technology; buried implanted layer for lateral isolation; buried layer/connecting layer structures; diffused wells; high energy ion implantation processes; latchup characteristics; latchup hardness optimization; retrograde well; Boron; CMOS technology; Doping profiles; Implants; Isolation technology; Resists; Robustness; Silicon; Space technology; Very large scale integration;
Conference_Titel :
Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International
Conference_Location :
Denver, CO
Print_ISBN :
0-7803-3575-9
DOI :
10.1109/RELPHY.1997.584285
