Study of a radiation hard CMOS process under the influence of Co/sup 60/ irradiation

Author

Yau, T.Y. ; Williams, H.H. ; Van der Spiegel, J. ; Van Berg, R.

Author_Institution

Pennsylvania Univ., Philadelphia, PA, USA

fYear

1991

fDate

2-9 Nov. 1991

Firstpage

1525

Abstract

Test structures fabricated in the UTMC (United Technology Microelectronics Center) 1.2- mu m p-well CMOS process were irradiated by Co/sup 60/ up to 3.8 Mrad. The threshold voltage shifts, Delta V/sub t/, of the NMOS were less than 270 mV, and those of the PMOS were less than 200 mV. The transconductance and transconductance parameter, KP, decreased by about 25% and 10%, for the NMOS and PMOS, respectively. The output conductance did not change much up to 3.8 Mrad. In addition, the change in mobility did not depend on the width and length of the transistor, but Delta V/sub t /of the NMOS, after 1.7 Mrad of irradiation, is shown to depend slightly on the length of the transistor.<>

Keywords

CMOS integrated circuits; gamma-ray effects; integrated circuit technology; radiation hardening (electronics); /sup 60/Co; 1.2 micron; 1.7 Mrad; 200 mV; 270 mV; 3.8 Mrad; NMOS; PMOS; gamma irradiation; mobility; p-well CMOS process; radiation hard CMOS process; threshold voltage shifts; transconductance parameter; transistor; CMOS process; Capacitance; Geometry; MOS devices; MOSFETs; Semiconductor device measurement; Temperature; Testing; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference, 1991., Conference Record of the 1991 IEEE

Conference_Location

Santa Fe, NM, USA

Print_ISBN

0-7803-0513-2

Type

conf

DOI

10.1109/NSSMIC.1991.259165

Filename

259165