Simulation of damage in materials subject to radiation by energetic ions

A three-dimensional computer simulation of the interaction of various heavy ion cosmic rays with silicon is presented. The initial ion strike is modeled by the classical trajectory Monte Carlo (CTMC) algorithm. Primary electrons produced by the CTMC code, along with their position and momenta, are entered into a nonrelativistic Monte Carlo electron transport program. Both elastic and inelastic scattering events are considered in the simulation of the secondary electron cascade. Inelastic collisions include ionization of all shells. A prediction is made of the quantity and distribution of charge generated within silicon due to the cosmic ray ion strike.<>