Title :
Nanoscale patterned sapphire substrates with cortexlike nanostructures for GaN-based LEDs
Author :
Yu-Sheng Lin ; Yeh, J. Andrew
Author_Institution :
Inst. of NanoEngineering & Microsyst., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
A new morphology of nanopatterned sapphire substrates (NPSS) was presented, which applied in LEDs exhibited an output power of 33.1 mW, higher than that on flat substrates 2.4-fold, owing to void-embedded NPSS with cortexlike nanostructures.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; nanopatterning; nanostructured materials; sapphire; wide band gap semiconductors; GaN; cortexlike nanostructures; light emitting diodes; nanopatterned sapphire substrates; power 33.1 mW; void-embedded NPSS; Gallium nitride; Light emitting diodes; Morphology; Nanoscale devices; Nanostructures; Power generation; Substrates; GaN; LED; naturnal lithography; patterned sapphire;
Conference_Titel :
Optical MEMS and Nanophotonics (OMN), 2011 International Conference on
Conference_Location :
Istanbul
Print_ISBN :
978-1-4577-0334-8
DOI :
10.1109/OMEMS.2011.6031092
