Title :
A review of the SOI four-gate transistor
Author :
Cristoloveanu, Sorin ; Akarvardar, Kerem ; Gentil, Pierre
Author_Institution :
Inst. of Microelectron., IMEP, Grenoble
Abstract :
Recent results on the characterization and applications of the SOI four-gate transistor (G4-FET) are reviewed. The advantages provided by four independent gates are discussed by distinguishing different operation modes: volume (depletion-all-around) and surface conduction. Several examples highlight the potential of the G4-FET for analog applications
Keywords :
field effect transistors; silicon-on-insulator; G4-FET; SOI four-gate transistor; analog applications; depletion-all-around; surface conduction; Analytical models; CMOS process; Circuit synthesis; Electromagnetics; Indium phosphide; MOSFET circuits; Microelectronics; Photonics; Transconductance; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306048
