Impact of improved mobility and low flicker noise MOS transistors using accumulation mode fully depleted silicon-on-insulator devices

Improved mobility and low flicker noise device characteristics of fully depleted silicon-on-insulator (FD-SOI) MOSFETs are focused in this paper, using normally off accumulation mode device structures. It is demonstrated that the current drivabilities of both accumulation mode FD-SOI n-and p-MOSFETs are improved above 1.3 times compared with inversion mode MOSFETs. The effective mobilities of accumulation mode MOSFETs are improved because of the lower effective electric field at the same gate bias and the bulk current components. The flicker noise characteristics in both accumulation mode FD-SOI n- and p-MOSFETs are about 1 digit lower compared with the inversion mode MOSFETs and show the SOI layer doping concentration dependences