Title :
Strain engineering for CMOS devices
Author :
Ungersboeck, E. ; Sverdlov, V. ; Kosina, H. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., TU Wien
Abstract :
This work reviews the current progress in high-mobility strained MOSFETs and covers the latest developments in strain engineering. The paper focuses on the connections between strain, band structure, and channel mobility characteristics. The authors show that accurate band structure calculations are essential to understand the different mechanisms of mobility gain induced by uniaxial and biaxial strain. The transport properties of strained silicon (Si) have been investigated by solving the Boltzmann equation using the Monte Carlo method
Keywords :
Boltzmann equation; MOSFET; Monte Carlo methods; band structure; transport processes; Boltzmann equation; CMOS devices; MOSFET; Monte Carlo method; band structure; biaxial strain; channel mobility; high-mobility strained; strain engineering; transport property; uniaxial strain; CMOS technology; Capacitive sensors; Compressive stress; Germanium silicon alloys; MOSFETs; Power engineering and energy; Silicon germanium; Substrates; Tensile stress; Uniaxial strain;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306094
