Title :
Effect of surface roughness on quasi-ballistic transport in nano-scale Ge and Si double-gate MOSFETs
Author :
Xia, Zhiliang ; Du, Gang ; Liu, Xiaoyan ; Kang, Jinfeng ; Han, Ruqi
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
Abstract :
Effect of surface roughness on quasi-ballistic transport in nano-scale Ge and Si double-gate (DG) MOSFETs are investigated using 2D full-band self-consistent ensemble Monte Carlo (MC) method based on solving quantum Boltzmann equation (QBE). Results show that the effect of the surface roughness on carrier quasi-ballistic transport in DG nMOSFETs is still significant even when the gate length scales down to 10 nm. Moreover, the influence of surface roughness can be suppressed by the non-local transport since the on-current of the Ge DG nMOSFETs decreasing less than that of Si DG nMOSFETs with increasing of surface roughness
Keywords :
Boltzmann equation; MOSFET; Monte Carlo methods; ballistic transport; elemental semiconductors; germanium; silicon; surface roughness; 2D full-band Monte Carlo method; Ge; Si; nanoscale double-gate MOSFETs; quantum Boltzmann equation; quasi-ballistic transport; surface roughness; Acoustic scattering; Doping; Electron mobility; MOSFETs; Microelectronics; Optical scattering; Particle scattering; Phonons; Rough surfaces; Surface roughness;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306124