An omni-directional comparison between common-emitter and common-base SiGe HBTs

Author

Zhenqiang Ma ; Ningyue Jiang ; Guogong Wang ; Hui Li ; Guoxuan Qin

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin-Madison Univ., Madison, WI

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

166

Lastpage

169

Abstract

The unique device structures of SiGe HBTs, in comparison to Si bipolar homojunction transistors (BJTs), allow us to reconsider the value of common-base (CB) configuration for high-frequency amplifications. In this paper, an omni-directional comparison between common-emitter (CE) and common-base SiGe power HBTs is made. By comparing the power gain, power handling, linearity, noise and stability characteristics between these two configurations, significant advantages for circuit design can be obtained by using the proper configuration of SiGe HBTs for certain amplifier applications

Keywords

amplifiers; heterojunction bipolar transistors; integrated circuit design; power bipolar transistors; SiGe; circuit design; common-base HBT; common-emitter HBT; high-frequency amplifications; omni-directional comparison; power HBT; Circuit noise; Circuit stability; Doping profiles; Drives; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Power amplifiers; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306128

Filename

4098050