Title :
A 22.3dB Voltage Gain 6.1dB NF 60GHz LNA in 65nm CMOS with Differential Output
Author :
Weyers, Christopher ; Mayr, Pierre ; Kunze, Johannes W. ; Langmann, Ulrich
Author_Institution :
Ruhr-Univ. Bochum, Bochum
Abstract :
This paper describes a 60GHz LNA, implemented in a 65nm digital CMOS technology, that has a single-ended input and a differenntial output. At 59.3GHz, the LNA achieves a maximum voltage gain of 22.3dB (power gain of 19.3dB). The input matching is better than -lOdB over the entire 3dB bandwidth from 55.8GHz to 63.5GHz. The LNA has a minimum measured NF of 6.1dB, an output compression point of +2.7dBm and draws 29mA from a 1.2V supply.
Keywords :
CMOS integrated circuits; low noise amplifiers; digital CMOS technology; frequency 60 GHz; gain 6.1 dB; input matching; low-noise amplifer; size 60 nm; CMOS technology; Circuit simulation; Frequency; Inductors; Noise figure; Noise measurement; Parasitic capacitance; Semiconductor device measurement; Solid state circuits; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2010-0
Electronic_ISBN :
978-1-4244-2011-7
DOI :
10.1109/ISSCC.2008.4523122
