• DocumentCode
    3463632
  • Title

    "Choices for future interconnect materials and processing"

  • Author

    Lu, Toh-Ming ; Gregory Ten Eyck

  • Author_Institution
    Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY
  • fYear
    2006
  • fDate
    Oct. 2006
  • Firstpage
    287
  • Lastpage
    290
  • Abstract
    For the next couple of generations, physical vapor deposition (PVD) for interconnect metal barriers and seeds appears to be extendable. At the same time a variety of atomic layer deposition (ALD) techniques are become available replacement options. New barrier materials such as Ru have also been considered. In this paper we discuss the motivations of these developments and the challenges for the implementation of these ideas
  • Keywords
    atomic layer deposition; integrated circuit interconnections; atomic layer deposition techniques; interconnect materials; interconnect metal barriers; physical vapor deposition; Atherosclerosis; Chemical vapor deposition; Conductivity; Dielectric constant; Dielectric materials; Electrons; Plasma temperature; Scattering; Surface treatment; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0160-7
  • Electronic_ISBN
    1-4244-0161-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.2006.306209
  • Filename
    4098088