Title :
Xe implantation in SiO/sub 2/: low-k applications
Author :
Ntsoenzok, E. ; Assaf, H. ; Ruault, M.-O. ; Ashok, S.
Author_Institution :
CERI-CNRS, Orleans
Abstract :
SiO2 samples were implanted with 300 keV xenon at various doses: 0.5 to 5 times 1016 Xe/cm2. As-implanted samples show that nm-size precipitates are created for these doses while bubble formation needs doses higher than 1016 Xe/cm . Thermal annealing at 750degC results in the disappearance of nano-precipitates while bubbles/cavities remain stable even after annealing at 1100degC. Capacitance-voltage (C-V) measurements clearly indicate a strong decrease of the dielectric constant (k), consistent with bubble/cavity formation in SiO2
Keywords :
annealing; arsenic; ion implantation; low-k dielectric thin films; permittivity; silicon compounds; xenon; 1100 C; 300 keV; 750 C; As implantation; SiO2; Xe implantation; capacitance-voltage measurements; dielectric constant; low-k applications; nanoprecipitates; thermal annealing; Amorphous materials; Annealing; Capacitance-voltage characteristics; Dielectric constant; Dielectric measurements; Helium; Nanoporous materials; Temperature; Transmission electron microscopy; Xenon;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306211
