Title :
ALD growth of Ru on RIE-pretreated TaN substrate
Author :
Zhou, Mi ; Chen, Tao ; Tan, Jing-jing ; Zhao, Feng ; Ru, Guo-Ping ; Li, Bingzong ; Qu, Xin-Ping
Abstract :
The polycrystalline ruthenium films were grown on TaN substrates by atomic layer deposition at temperatures ranging from 300 degC to 330 degC using bis(cyclopentadienyl) ruthenium [RuCp2] and oxygen as precursors. Pretreatment of reactive ion etching (RIE) was performed to the underlying substrates before deposition in order to improve the nucleation. Various tests were carried out to characterize the as-deposited samples. The results showed that the nucleation density of Ru films with RIE pretreatment to the underlying TaN substrates was much higher than that of the ones without any pretreatment. But still the deposited Ru films were not very uniform and there was a Tax Oy film between Ru and TaN caused by thermal ALD process
Keywords :
atomic layer deposition; crystal growth; nucleation; polymer films; ruthenium; ruthenium compounds; sputter etching; tantalum compounds; 300 to 330 C; ALD; RIE; Ru; atomic layer deposition; bis(cyclopentadienyl) ruthenium; film deposition; nucleation density; polycrystalline ruthenium films; reactive ion etching; substrate growth; Atomic force microscopy; Atomic layer deposition; Conductivity; Photoelectron microscopy; Scanning electron microscopy; Semiconductor films; Sputtering; Substrates; Temperature distribution; Transmission electron microscopy;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306220
