• DocumentCode
    346404
  • Title

    MTOTM thyristor: an efficient replacement for the standard GTO

  • Author

    Huang, Alex Q. ; Li, Yuxin ; Motto, Kevin ; Zhang, Bo

  • Author_Institution
    Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    364
  • Abstract
    The MOS turn-off (MTOTM) thyristor is a novel hybrid MOS-bipolar high power semiconductor device with the advantages of the gate turn-off thyristor´s (GTO) high voltage and high current capabilities, and the ease of control of a MOS gate. Voltage controlled turn-off of the GTO is realized by turning on the MOSFET. Significant simplification in the drive circuit is therefore expected for the MTO TM. Reduction or elimination of the dV/dt snubber is also demonstrated for the MTO. This paper analyzes the performance of the MTO TM and compares that with the conventional GTO
  • Keywords
    MOS-controlled thyristors; driver circuits; voltage control; MOS turn-off thyristor; MOSFET turning on; MTO thyristor; dV/dt snubber reduction; drive circuit; high current capability; high voltage capability; hybrid MOS-bipolar high power semiconductor device; voltage controlled turn-off; Control systems; Insulated gate bipolar transistors; MOSFET circuits; Performance analysis; Power electronics; Power semiconductor devices; Snubbers; Thyristors; Turning; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industry Applications Conference, 1999. Thirty-Fourth IAS Annual Meeting. Conference Record of the 1999 IEEE
  • Conference_Location
    Phoenix, AZ
  • ISSN
    0197-2618
  • Print_ISBN
    0-7803-5589-X
  • Type

    conf

  • DOI
    10.1109/IAS.1999.799982
  • Filename
    799982
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=346404