Title :
MTOTM thyristor: an efficient replacement for the standard GTO
Author :
Huang, Alex Q. ; Li, Yuxin ; Motto, Kevin ; Zhang, Bo
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
The MOS turn-off (MTOTM) thyristor is a novel hybrid MOS-bipolar high power semiconductor device with the advantages of the gate turn-off thyristor´s (GTO) high voltage and high current capabilities, and the ease of control of a MOS gate. Voltage controlled turn-off of the GTO is realized by turning on the MOSFET. Significant simplification in the drive circuit is therefore expected for the MTO TM. Reduction or elimination of the dV/dt snubber is also demonstrated for the MTO. This paper analyzes the performance of the MTO TM and compares that with the conventional GTO
Keywords :
MOS-controlled thyristors; driver circuits; voltage control; MOS turn-off thyristor; MOSFET turning on; MTO thyristor; dV/dt snubber reduction; drive circuit; high current capability; high voltage capability; hybrid MOS-bipolar high power semiconductor device; voltage controlled turn-off; Control systems; Insulated gate bipolar transistors; MOSFET circuits; Performance analysis; Power electronics; Power semiconductor devices; Snubbers; Thyristors; Turning; Voltage control;
Conference_Titel :
Industry Applications Conference, 1999. Thirty-Fourth IAS Annual Meeting. Conference Record of the 1999 IEEE
Conference_Location :
Phoenix, AZ
Print_ISBN :
0-7803-5589-X
DOI :
10.1109/IAS.1999.799982
