Title :
The impact of forming temperature on material and electrical characteristics of nickel silicide gate electrode
Author :
Shan, Xiaonan ; Cai, Yimao ; Xu, Chuan ; Li, Yan ; Huang, Ru
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
Abstract :
In this letter, the material and electrical characteristics of the nickel silicide (NiSi) formed at various RTA temperatures as gate electrode has been studied. By comparing various samples formed at 400 degC, 450 degC, 500 degC, and 600 degC with Vfb-EOT curves, work function and fixed charge, we found that when the RTA temperature is higher than 500 degC the interaction between the NiSi and SiO2 damage the gate dielectric (silicon dioxide) and change the effective work function of the NiSi (from 400 degC 4.47eV to 600 degC 4.64eV) by defects which is result of Ni-Si bonds. And the work function of NiSi is 4.47 plusmn 0.02 eV (formed at 400 degC, 450degC and 500degC). Finally we compared the reliability of the NiSi gate capacitor formed at 400 degC 450 degC and 500 degC, and get the conclusion that NiSi formed at 400 degC and 450 degC is stable on the silicon oxide
Keywords :
MOS capacitors; dielectric materials; nickel compounds; rapid thermal annealing; semiconductor device reliability; silicon compounds; work function; 400 to 600 C; NiSi-SiO2-Si; RTA temperatures; capacitor reliability; effective work function; electrical characteristics; forming temperature impact; gate dielectric; gate electrode; material characteristics; Annealing; CMOS technology; Capacitance-voltage characteristics; Capacitors; Channel bank filters; Electric variables; Electrodes; Nickel; Silicides; Temperature;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306307
