A novel MOSFET pressure microsensor

Author

Zhang, Yan-Hong ; Liu, Li-Tian ; Zhang, Zhao-Hua ; Tan, Zhi-Min ; Lin, Hui-Wang ; Ren, Tian-Ling

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing

fYear

2006

fDate

Oct. 2006

Firstpage

614

Lastpage

616

Abstract

A novel MOSFET pressure sensor is firstly proposed based on the MOSFET stress sensitive phenomenon, in which the source-drain current changes with the stress in channel region. It uses two MOSFET´s and two piezoresistors to form a Wheatstone bridge. Compared with the traditional piezoresistive pressure sensor, this MOSFET sensor´s sensitivity is improved significantly, meanwhile the power can be decreased. The fabrication is low-cost and compatible with standard IC process. It shows the great promising application of MOSFET-bridge-circuit structure for the high performance pressure microsensors

Keywords

MOSFET; bridge circuits; microsensors; piezoresistive devices; pressure sensors; IC process; MOSFET pressure microsensor; MOSFET-bridge-circuit structure; Wheatstone bridge; improved sensor sensitivity; piezoresistors; stress sensitive phenomenon; Bridge circuits; Charge carrier processes; Fabrication; MOSFET circuits; Microsensors; Piezoresistance; Piezoresistive devices; Sensor phenomena and characterization; Silicon; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306392

Filename

4098184