Title :
Diffusion of chromium into GaAs as a way to detector material making
Author :
Ardyshev, M.V. ; Prudajev, I.A. ; Khludkov, S.S.
Author_Institution :
V.D. Kuznetsov Physicotech. Inst., Tomsk State Univ., Russia
Abstract :
The diffusion of chromium that is deep impurity in GaAs has been investigated as a way to high-ohmic detector material making. The coefficient of diffusion and the limiting dissolubility of chromium have been estimated.
Keywords :
III-V semiconductors; chromium; diffusion; gallium arsenide; impurity states; semiconductor counters; semiconductor doping; GaAs:Cr; X-ray detection; chromium; deep impurity; diffusion coefficient; high-ohmic detector material; Chromium; Conductivity; Doping; Gallium arsenide; Impurities; Radiation detectors; Temperature dependence; Temperature distribution; X-ray detection; X-ray detectors; chromium; coefficient of diffusion; gallium arsenide;
Conference_Titel :
Control and Communications, 2005. SIBCON '05. IEEE International Siberian Conference on
Print_ISBN :
0-7803-9219-1
DOI :
10.1109/SIBCON.2005.1611195
