Thermal analysis for hybrid pair module of Si-IEGT and SiC-PiN diode

Author

Wada, Keiji ; Koyama, Jumpei ; Takao, Kazuto ; Kanai, Takeo ; Oohashi, Hiromichi

Author_Institution

Tokyo Metropolitan Univ., Tokyo, Japan

fYear

2010

fDate

21-24 June 2010

Firstpage

2135

Lastpage

2140

Abstract

This paper presents a thermal analysis and designs a water-cooled heat sink for an Si-IEGT and SiC-PiN diode module rated at 4.5-kV and 100 A. The operation temperature and thermal conductivity of the SiC-PiN diode are higher than that of the Si-IEGT. Therefore a design procedure for the water-cooled heat sink should be considered characteristics of each device. This paper shows a thermal analysis result using a 3D-FEM for the hybrid pair modules and demonstrates the experimental results using the prototype water-cooled heat sink for the 100-A module.

Keywords

elemental semiconductors; finite element analysis; heat sinks; semiconductor device models; semiconductor diodes; silicon; silicon compounds; thermal analysis; 3D-FEM; IEGT; PiN diode; Si; SiC; current 100 A; designs; hybrid pair module; thermal analysis; thermal conductivity; voltage 4.5 kV; water-cooled heat sink; Circuit topology; Electronics cooling; Electronics industry; Heat sinks; Inverters; Medium voltage; Power electronics; Semiconductor diodes; Thermal conductivity; Water heating; IEGT; SiC-PiN diode; thermal resistance; water-cooled heat sink;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Conference (IPEC), 2010 International

Conference_Location

Sapporo

Print_ISBN

978-1-4244-5394-8

Type

conf

DOI

10.1109/IPEC.2010.5543639

Filename

5543639