DocumentCode :
3466033
Title :
Fabrication and properties of nano-Si quantum dot flash memory
Author :
Li, Tingkai ; Hsu, Sheng Teng
Author_Institution :
Sharp Labs. of America Inc., Camas, WA
fYear :
2006
fDate :
23-26 Oct. 2006
Firstpage :
732
Lastpage :
735
Abstract :
We proposed a novel integration processes including multilayer CVD poly-Si deposition and post-annealing and thermal oxidation processes for nano-Si quantum dot flash memory devices have been fabricated. With increasing tunneling oxide thickness, the operation voltage increases, but retention properties are improved. With increasing nono-Si particle sizes and layer thickness the memory window increases from 6V to 12V. After programming to "on" or "off" states, the drain current read at 1V is about 5 times 10-4 A and 5 times 10-12 A respectively. The ratio of "on" current to "off" current is about 8 orders. The nano-Si quantum dot memory devices show very good properties
Keywords :
annealing; chemical vapour deposition; flash memories; oxidation; quantum dots; silicon; tunnelling; 1 V; 6 to 12 V; Si; memory window; multilayer CVD; nano-Si quantum dot flash memory; poly-Si deposition; post-annealing; thermal oxidation; tunneling oxide thickness; Fabrication; Flash memory; Quantum dots;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
Type :
conf
DOI :
10.1109/ICSICT.2006.306471
Filename :
4098219
Link To Document :
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