Title :
Complimentary Bit Disturb in MirrorBitTM Flash Technology
Author :
Wang, Linda ; Darilek, John ; Clopton, Mark ; Klein, Greg ; Baker, Ray ; Shingo, Masaki ; Kirsch, Travis
Author_Institution :
Spansion LLC, Austin, TX
Abstract :
One of the most important breakthroughs in the area of non-volatile memories is the MirrorBittrade technology, which enables two bits to be stored in a single cell with a simple architecture and manufacturing process. Complimentary bit disturb (CBD), a critical property for MirrorBittrade or dual bit memory, has been followed with wide interest. This paper presents a study of CBD with various cell parameters like channel length, dielectrical layer thickness, and bitline width on MirrorBittrade devices. All experimental data was collected from MirrorBittrade production wafers, which represent the latest flash manufacturing technology
Keywords :
dielectric materials; flash memories; integrated circuit manufacture; random-access storage; MirrorBit flash technology; MirrorBit production wafers; bitline width; channel length; complimentary bit disturb; dielectrical layer thickness; dual bit memory; nonvolatile memories; Channel hot electron injection; Charge carrier processes; Dielectric devices; Electron traps; Hot carriers; Manufacturing processes; Mirrors; Nonvolatile memory; Production; Tunneling;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306480
