Title :
Drain Disturb Related to Negative VB in NOR flash
Author :
Kai, Shi ; Mingzhen, Xu ; Changhua, Tan
Author_Institution :
Dept. of Microelectron., Peking Univ., Shenzhen
Abstract :
In this paper, the effects of negative substrate bias on the drain disturb of NOR ETOXtrade flash EEPROM have been investigated. According to the quantity of the charge stored in the floating gate, the tests can be separated into two cases (CL: charge loss & CG: charge gain), and in some of the cases, an optimal negative substrate bias condition will be obtained as a trade-off between efficiency and reliability
Keywords :
NOR circuits; flash memories; EEPROM; NOR flash memories; charge gain; charge loss; drain disturb; floating gate; negative substrate bias; Channel hot electron injection; Character generation; EPROM; Memory; Microelectronics; Stress; Testing; Thickness control; Tunneling; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306514
