DocumentCode
3466950
Title
Plasma Treatment on the Plastic Substrates for Liquid Phase Deposited SiO2 Films for Flexible Electronics Applications
Author
Lin, Yu-Ju ; Yeh, Chih-Chieh ; Huang, Li-Ming ; Ten-Chin Wen ; Wang, Yeong-Her
Author_Institution
Dept. of Electr. Eng., National Cheng-Kung Univ., Tainan
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
893
Lastpage
895
Abstract
Liquid phase deposition (LPD) method to grow the silicon dioxide interlayer on the PES plastic substrates with the O2/Ar plasma pre-treatment is investigated. After which, the interlayer on the plastic substrates is grown and the films´ quality on the substrates with or without the plasma pre-treatment is examined by using scanning electron microscopy, etching rate of the oxide layer by the diluted HF solution and surface leakage current measurement. The pentacene-based organic thin film transistors on the dielectric layers suitable for flexible electronics applications are demonstrated
Keywords
electric current measurement; etching; flexible electronics; leakage currents; liquid phase deposited coatings; organic compounds; plasma materials processing; scanning electron microscopy; silicon compounds; thin film transistors; PES plastic substrates; SiO2; dielectric layers; diluted HF solution; etching rate; flexible electronics; liquid phase deposited films; liquid phase deposition; oxide layer; pentacene-based organic thin film transistors; plasma pre-treatment; plasma treatment; scanning electron microscopy; silicon dioxide interlayer; surface leakage current measurement; Argon; Dielectric substrates; Etching; Flexible electronics; Hafnium; Plasma applications; Plasma measurements; Plastic films; Scanning electron microscopy; Silicon compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306563
Filename
4098268
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