Comparison of Nonlinear I-V Models for Submicron GaAs MESFET´s Characteristics

A comparison of nine different nonlinear I-V models for the simulation of submicron GaAs MESFETs dc characteristics has been made. The drain-to-source current, I_ds as a function of gate-to-source, V_gs and drain-to-source, V_ds voltages has been simulated and then compared with experimental data to determine root-mean-square (RMS) errors. The lowest RMS error was observed in Ahmed model whereas the highest RMS error was seen in Statz model. It has been shown that for submicron devices only those models can predict the device characteristics, with reasonable accuracy, which take into account short channel effects in their modeling parameters