Epitaxial growth of SiC films at low temperature and its photoluminescence

Author

Wu, Zhao ; Zhang, Zhi-Yong ; Deng, Zhou-Hu ; Wang, Ue-Wen ; Yan, Jun-Feng ; Ni, Yun-Jiang

Author_Institution

Xi´´an Inst. of Opt. & Precision Mech., Chinese Acad. of Sci., Shaanxi

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

932

Lastpage

934

Abstract

In this paper, our work on heteroepitaxial SiC films deposited on single-crystalline (111) silicon by hot filament chemical vapor deposition (HFCVD) at low temperature of 800 degC is reported. The surface topography of SiC films on Si substrate were analyzed by atomic force microscope (AFM). The characteristics and crystallinity of the SiC film were examined by X-ray diffractometer (XRD) and Fourier transform infrared (FTIR). As can be seen in XRD spectrum, the peaks of Si (111), SiC (111) and SiC (222) appeared. And TO-phonon absorption peaks (804.95cm^-1) of Si-C bonds also emerged in Fourier transform infrared spectra. In particular, intensive visible-light emitting at 411nm and 43 6nm has been observed at room temperature in photoluminescence experiments

Keywords

Fourier transform spectroscopy; X-ray diffractometers; atomic force microscopy; chemical vapour deposition; elemental semiconductors; epitaxial growth; infrared spectroscopy; photoluminescence; silicon; silicon compounds; surface topography; thin films; wide band gap semiconductors; 411 nm; 436 nm; 800 C; AFM; FTIR; Fourier transform infrared spectra; HFCVD; Si-C bonds; SiC; TO-phonon absorption; X-ray diffractometer; XRD; atomic force microscope; epitaxial growth; heteroepitaxial SiC films; hot filament chemical vapor deposition; photoluminescence; single-crystalline silicon; surface topography; Atomic force microscopy; Chemical vapor deposition; Epitaxial growth; Fourier transforms; Photoluminescence; Semiconductor films; Silicon carbide; Surface topography; Temperature; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306598

Filename

4098281