Epitaxial growth of SiC films at low temperature and its photoluminescence

In this paper, our work on heteroepitaxial SiC films deposited on single-crystalline (111) silicon by hot filament chemical vapor deposition (HFCVD) at low temperature of 800 degC is reported. The surface topography of SiC films on Si substrate were analyzed by atomic force microscope (AFM). The characteristics and crystallinity of the SiC film were examined by X-ray diffractometer (XRD) and Fourier transform infrared (FTIR). As can be seen in XRD spectrum, the peaks of Si (111), SiC (111) and SiC (222) appeared. And TO-phonon absorption peaks (804.95cm^-1) of Si-C bonds also emerged in Fourier transform infrared spectra. In particular, intensive visible-light emitting at 411nm and 43 6nm has been observed at room temperature in photoluminescence experiments