Design and Performance of a Preamplifier for HgCdTe IR Detectors

Author

Yuan, Hong-hui ; Chen, Yong-ping

Author_Institution

Shanghai Inst. of Tech. Phys., Chinese Acad. of Sci.

fYear

2006

fDate

Oct. 2006

Firstpage

983

Lastpage

985

Abstract

In this paper, A high-performance low-power low-noise preamplifier working at lower temperature (about 90K) for HgCdTe IR detectors is designed by using a single-ended folded-cascode structure and by using an MOS transistor operating in the linear region as feedback resistor. Its noise characteristics were analyzed and the methods for decreasing noise were put forward. This preamplifier was fabricated in 1.2 y- m CMOS technology. The size of four cell chip is 2.1mm times 2.9mm. The test result shows that the preamplifier can work at the temperature of 90K. The equivalent input noise current is 0.03pA/Hz^frac12@100Hz and the power consumption is less than 1mW . This preamplifier works well when it be used in conjunction with HgCdTe IR detectors, and the performance has good linearity

Keywords

CMOS integrated circuits; infrared detectors; low-power electronics; mercury compounds; preamplifiers; HgCdTe; IR detectors; MOS transistor; low power low noise preamplifier; lower temperature; noise characteristics; preamplifier design; single ended folded cascode structure; CMOS technology; Energy consumption; Feedback; Infrared detectors; Linearity; MOSFETs; Preamplifiers; Resistors; Temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306615

Filename

4098298