Title :
Formation of fB-FeSi2 from Fe/Si Multilayers by Sputtering
Author :
Shen, Hong-Lie ; Lu, Lin-Feng ; Sakamoto, Isao ; Koike, Masaki ; Makita, Yunosuke
Author_Institution :
Coll. of Mater. Sci. & Technol., Nanjing Univ. of Aeronaut. & Astronaut.
Abstract :
Semiconducting iron disilicide (beta-FeSi2) films were formed on Si(100) substrate from sputtered Fe/Si multilayers by thermal annealing. The samples were characterized by X-ray diffraction, Rutherford backscattering spectroscopy, scanning electron microscopy and optical absorption measurement. (202)/(220) oriented beta-FeSi2 films were fabricated according to XRD patterns. It was found that there was a very small redistribution of Fe and Si components in the films. It was also revealed by scanning electron microscopy that multilayer structure could result in a smooth surface for beta-FeSi 2 films. Optical absorption spectra demonstrated that the films had a direct band gap of about 0.9 eV at room temperature
Keywords :
Rutherford backscattering; X-ray diffraction; annealing; iron compounds; light absorption; multilayers; scanning electron microscopy; semiconductor thin films; sputtering; Fe/Si multilayers; FeSi2; Rutherford backscattering spectroscopy; X-ray diffraction; optical absorption measurement; scanning electron microscopy; semiconducting iron disilicide films; sputtering; thermal annealing; Electron optics; Iron; Nonhomogeneous media; Optical films; Optical microscopy; Scanning electron microscopy; Semiconductivity; Semiconductor films; Sputtering; Substrates;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306649
