Title :
A novel low-voltage low-power CMOS voltage reference based on subthreshold MOSFETs
Author :
Jianping, Wang ; Xinquan, Lai ; Yushan, Li ; Jie, Zhang ; Xiaofeng, Guo
Author_Institution :
Inst. of Electron. CAD, Xidian Univ., Xi´´an
Abstract :
A novel high precision low-voltage low-power CMOS voltage reference operating in subthreshold region is presented. With a power supply voltage of 1.0V, the temperature coefficient of circuit designed with standard 0.5mum CMOS technology is 66.7ppm/degC for a temperature range of -40 degC to 125degC and an output voltage which is 225mV within plusmn1.4%.The power supply current of the whole circuit is less than 4muA. A study of gate-source voltage behavior with respect to temperature in subthreshold MOSFETs is also presented
Keywords :
CMOS analogue integrated circuits; low-power electronics; reference circuits; -40 to 125 C; 0.5 micron; 1.0 V; 225 mV; CMOS voltage reference; gate-source voltage behavior; low-voltage low-power voltage reference; power supply current; subthreshold MOSFET; Analog integrated circuits; CMOS technology; Current supplies; Design automation; Diodes; MOSFETs; Photonic band gap; Power supplies; Temperature distribution; Voltage;
Conference_Titel :
ASIC, 2005. ASICON 2005. 6th International Conference On
Conference_Location :
Shanghai
Print_ISBN :
0-7803-9210-8
DOI :
10.1109/ICASIC.2005.1611340
