Resonant Tunneling Diodes on Si Substrates Using Fluoride Heterostructures and Feasibility of Application to Integrated Circuits

Author

Tsutsui, Kazuo ; Watanabe, So ; Maeda, Motoki ; Sugisaki, Tsuyoshi ; Toriumi, Yohei

Author_Institution

Dept. of Electron. & Appl. Phys., Tokyo Inst. of Technol., Yokohama

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

1058

Lastpage

1061

Abstract

Resonant tunneling diodes (RTDs) composed of heteroepitaxial fluorides on Si substrates have been investigated as a candidate of Si-based highly functional quantum device. Problems for growth of good heterostructure were overcame by various techniques such as post oxidation, introduction of fluoride alloy system, improved heterostructures and V-grooved structures. These techniques improved electrical properties and stability of the fluoride RTDs significantly, and made such devices realistic candidates for co-integration in the Si-based integrated circuits

Keywords

electric properties; elemental semiconductors; monolithic integrated circuits; resonant tunnelling diodes; silicon; substrates; RTD; Si substrates; Si-based highly functional quantum device; Si-based integrated circuits; V-grooved structures; electrical properties; fluoride alloy system; fluoride heterostructures; heteroepitaxial fluorides; resonant tunneling diodes; Application specific integrated circuits; CMOS logic circuits; Chemicals; FETs; Logic devices; Oxidation; Resonant tunneling devices; Semiconductor diodes; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306660

Filename

4098321