Title :
Single-event upset test results for the Xilinx XQ1701L PROM
Author :
Guertin, Steven M. ; Swift, G.M. ; Nguyen, D.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
A 3.3 V serial PROM, used to configure advanced Xilinx FPGAs, was tested for single event effects with heavy ions. Device latchup was observed with an LET threshold of 55 MeV per mg/cm2 and a saturated cross-section of 10-5 cm2. Three types of upsets were measured: (1) address errors, (2) premature end-of-program signals, and (3) functional interrupt
Keywords :
PROM; field programmable gate arrays; integrated circuit testing; ion beam effects; radiation hardening (electronics); 3.3 V; LET threshold; Xilinx XQ1701L PROM; address errors; advanced Xilinx FPGAs; device latchup; functional interrupt; heavy ions; premature end-of-program signals; saturated cross-section; serial PROM; single event effects; single-event upset test; Field programmable gate arrays; Laboratories; PROM; Pins; Programming profession; Propulsion; Random access memory; Space technology; Substrates; Testing;
Conference_Titel :
Radiation Effects Data Workshop, 1999
Conference_Location :
Norfolk, VA
Print_ISBN :
0-7803-5660-8
DOI :
10.1109/REDW.1999.816054
