Title :
Effects of Quantized Energy Levels of QDs Confined in Asymmetric Barriers within Silicon Nanowire Transistor
Author :
Chen, Jiezhi ; Shi, Yi ; Pu, Lin ; Zheng, Youdou ; Long, Shibing ; Liu, Ming
Author_Institution :
Dept. of Phys., Nanjing Univ.
Abstract :
Single-electron transistors with silicon nanowire channel are successfully fabricated using TMAH anisotropic etching and thermal oxidation method. Transport characteristics of devices are investigated with different source/drain bias at low temperatures. Clear negative differential conductance and CB oscillations with multiple fine peaks are observed, which can be successfully explained considering the asymmetric tunneling barriers and large quantized energy levels due to ultra-small quantum dots. Especially, double-peak coupling effect is observed in Ids-Vg characteristics for the first time
Keywords :
energy states; etching; nanowires; oxidation; semiconductor quantum dots; silicon; single electron devices; tunnelling; CB oscillations; QD; Si; TMAH anisotropic etching; asymmetric barriers; double-peak coupling effect; negative differential conductance; quantized energy levels; quantum dots; silicon nanowire channel; silicon nanowire transistor; single-electron transistors; source/drain bias; thermal oxidation method; Energy states; Etching; Nanoscale devices; Oxidation; Plasma temperature; Rough surfaces; Silicon; Single electron transistors; Tunneling; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306683
