DocumentCode
3468488
Title
Models of Source/Drain Bias on Negative Bias Temperature Instability
Author
Gan, Z.H. ; Liao, C.C. ; Liao, M. ; Wang, J.P. ; Wong, W. ; Yan, B.G. ; Kang, J.F. ; Won, Y.Y.
Author_Institution
Semicond. Manuf. Int. Corp., Shanghai
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
1119
Lastpage
1121
Abstract
This paper discusses the influence of source/drain (S/D) bias on negative bias temperature instability (NBTI) in pMOS devices. It is found that with the S/D bias increase, the NBTI degradation is initially reduced, but it increases with higher S/D bias. Two models are presented to explain the underlying mechanisms. One is the graded hydrogen density model, which dominates at the low S/D bias; and the other is the energetic hole model, which successfully explains the high threshold voltage (Vth) shift at high S/D bias
Keywords
MOSFET; hole traps; semiconductor device models; stability; NBTI degradation; energetic hole model; negative bias temperature instability; pMOS devices; source/drain bias model; CMOS technology; Degradation; Hydrogen; MOSFET circuits; Negative bias temperature instability; Niobium compounds; Plasma temperature; Thermal stresses; Threshold voltage; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306699
Filename
4098340
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