DocumentCode
3468686
Title
Ionizing Irradiation Effect of Fluorine Implanted Metal-BOX-Silicon Structure Based on SOI
Author
Li, Ning ; Wang, Ning-Juan ; Liu, Zhong-Li ; Zhang, Guo-Qiang ; Zheng, Zhong-Shan ; Lin, Qing ; Zhang, En-Xia ; Lin, Cheng-Lu
Author_Institution
Inst. of Semicond., CAS, Beijing
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
1153
Lastpage
1155
Abstract
Ionizing irradiation effects on MBS (metal-BOX-silicon) have been studied in this paper. Through pre- and post-irradiation high-frequency (HF) C-V curves of MBS of several samples in which fluorine was implanted into BOX of SIMOX, it was found that PD fluoridated SIMOX is beneficial to harden buried oxide layer
Keywords
SIMOX; buried layers; fluorine; ion implantation; radiation hardening (electronics); F; SIMOX; SOI; buried oxide layer; fluorine implantation; high-frequency C-V curves; ionizing irradiation effect; metal-BOX-silicon structure; Annealing; Capacitance-voltage characteristics; Capacitors; Channel bank filters; Content addressable storage; Hafnium; Interface states; Laboratories; Transducers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306060
Filename
4098351
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