Title :
Direct measurement of localized joule heating in silicon devices by means of newly developed high resolution IR microscopy
Author :
Yasuda, Atsumi ; Yamaguchi, Hizuru ; Tanabe, Yoshikazu ; Owada, Nobuo ; Hirasawa, Shigeki
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
A high resolution IR microscope, especially designed for measuring localized joule heating effect in silicon devices, has been developed by combining a ZnS objective lens and a HgCdTe infrared detector. This microscope has achieved the practical spatial resolution of 10 mu m and practical temperature resolution of 0.24 K. With this IR microscope, the joule heating effect in poly-Si (polycrystalline silicon) thin film resistors formed on SiO/sub 2/ thin layer has been measured, simulating SOI (silicon on insulator) structures. A significant temperature rise was observed in this device structure, because of the low thermal conductivity of the SiO/sub 2/ layer, suggesting the possibility of new reliability problems caused by the joule heating effect in SOI structures.<>
Keywords :
infrared detectors; infrared imaging; optical microscopes; optical microscopy; semiconductor device testing; temperature measurement; HgCdTe infrared detector; SOI structures; Si devices; SiO/sub 2/; ZnS objective lens; high resolution IR microscopy; localized joule heating; polysilicon; reliability problems; thin film resistors; Infrared heating; Lenses; Microscopy; Optical design; Silicon devices; Silicon on insulator technology; Spatial resolution; Temperature; Thermal conductivity; Zinc compounds;
Conference_Titel :
Reliability Physics Symposium, 1991, 29th Annual Proceedings., International
Conference_Location :
Las Vegas, NV, USA
Print_ISBN :
0-87942-680-2
DOI :
10.1109/RELPHY.1991.146022
