A New Two-dimensional Analytical Model for Threshold Voltage in Undoped Surrounding-gate MOSFETs

Author

Chiang, T.K.

Author_Institution

Dept. of Electron. Eng., Southern Taiwan Univ. of Technol., Tainan

fYear

2006

fDate

Oct. 2006

Firstpage

1234

Lastpage

1238

Abstract

Based on the fully and exact two-dimensional (2-D) resultant solution of Poisson´s equation in oxide and silicon regions, a 2-D analytical model for threshold voltage undoped surrounding-gate MOSFETs is derived. The model show that the threshold voltage degradation agrees well with 2-D numerical simulation results over a wide range of device parameters even when the channel length scaled down to 20nm. Both the thin film and thin oxide are preferred to suppress the short-channel effects (SCEs). Besides providing the physical insight into the device physics, the model also offers the basic design guidance for the SG MOSFETs

Keywords

MOSFET; Poisson equation; semiconductor device models; 2D analytical model; 2D numerical simulation; Poisson equation; design guidance; device physics; short-channel effects; thin film; thin oxide; threshold voltage degradation; undoped surrounding-gate MOSFET; Analytical models; Degradation; MOSFETs; Numerical simulation; Physics; Poisson equations; Silicon; Threshold voltage; Transistors; Two dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306102

Filename

4098371