Title :
Impact of Intrinsic Parameter Fluctuations on SRAM Cell Design
Author :
Cheng, B. ; Roy, S. ; Asenov, A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ.
Abstract :
Intrinsic parameter fluctuations, arising from the granular nature of charge and matter, are predicted to be a critical roadblock to the future CMOS 6-T SRAM scaling. A hierarchal simulation methodology, which can fully collate intrinsic parameter fluctuation information into compact model sets, is employed to investigate the impact of random dopant fluctuation on SRAM static noise margin, and the bias control technology is introduced as a possible solution to improve the SRAM´s immunity to intrinsic parameter fluctuation
Keywords :
CMOS integrated circuits; SRAM chips; integrated circuit modelling; scaling circuits; 6-T SRAM scaling; CMOS; SRAM cell design; bias control technology; compact model; hierarchal simulation; intrinsic parameter fluctuations; random dopant fluctuation; static noise margin; Circuit simulation; Fluctuations; Lattices; MOS devices; MOSFETs; Random access memory; Resource description framework; Semiconductor process modeling; Stability; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306117
