• DocumentCode
    3469682
  • Title

    Pulsed power switching of 4H-SiC vertical D-MOSFET and device characterization

  • Author

    Bilbao, Argenis ; Ray, William B. ; Schrock, James A. ; Lawson, Kevin ; Bayne, Stephen B. ; Lin Cheng ; Agarwal, Anant K. ; Scozzie, Charles

  • Author_Institution
    Electr. & Comput. Eng. Dept., Texas Tech Univ., Lubbock, TX, USA
  • fYear
    2013
  • fDate
    16-21 June 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The purpose of this research is to characterize and compare CREE´s new N-Channel Silicon Carbide (4H-SiC) vertical power D-MOSFET with CREE´s previous generation of N-Channel Silicon Carbide (4H-SiC) vertical power D-MOSFET. Changes made to the newest MOSFET design lead to a 400% increase in pulsed current handling capability over the previous generation device with the same active area.
  • Keywords
    hydrogenation; power MOSFET; pulsed power technology; silicon compounds; wide band gap semiconductors; MOSFET design; N-channel silicon carbide vertical power D-MOSFET; SiC; device characterization; pulsed current handling capability; pulsed power switching; Degradation; Logic gates; MOSFET; Resistance; Silicon carbide; Switches; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Pulsed Power Conference (PPC), 2013 19th IEEE
  • Conference_Location
    San Francisco, CA
  • ISSN
    2158-4915
  • Type

    conf

  • DOI
    10.1109/PPC.2013.6627636
  • Filename
    6627636
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3469682