An analytical Model and New Structure of SOI High Voltage Devices with Compound Dielectric layer

Author

Luo, Xiao-Rong ; Zhang, Bo ; Li, Zhao-Ji

Author_Institution

Sch. of Microelectron. & Solid-State Electron., Electron. Sci. & Technol. Univ., Chengdu

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

1370

Lastpage

1372

Abstract

A novel SOI high voltage device with compound dielectric buried layer (CDL SOI) and its analytical model is proposed. The vertical electric field of buried layer is enhanced due to the low k (permittivity) of dielectric layer and the electric field in the drift region is modulated by the compound dielectric layer with different k, and both increases breakdown voltage of device. The electric field distribution and potential distribution is investigated. The simulation results are in good agreement with the analytical results. It shows the electric field of buried layer and breakdown voltage of CDL SOI when low k value is 2 are enhanced by 82% and 58% comparing with conventional SOI, respectively

Keywords

dielectric materials; permittivity; semiconductor device breakdown; semiconductor device models; silicon-on-insulator; SOI high voltage devices; analytical model; breakdown voltage; compound dielectric buried layer; electric field distribution; permittivity; potential distribution; vertical electric field; Analytical models; Breakdown voltage; Dielectric breakdown; Dielectric devices; Medical simulation; Microelectronics; Neodymium; Poisson equations; Power integrated circuits; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306186

Filename

4098412