Title :
Analysis of Self-Heating in Poly-Si Thin-Film Transistors and Circuits by a Self-Consistent Electro-Thermal Simulation Approach
Author :
Guo, Xiaojun ; Silva, S.R.P.
Author_Institution :
Adv. Technol. Inst., Surrey Univ., Guildford
Abstract :
This paper investigated the self-heating effects in poly-Si thin-film transistors (TFTs) and circuit(s) by using a self-consistent electro-thermal simulation approach. The analysis indicates that, for the poly-Si technology, self-heating may lead to a significant degradation of the device´s characteristics, and severely impact the circuit performance; therefore, reinforce the need for effective cooling strategies and also accurate device/circuit level models, including electro-thermal coupling effects, for reliable poly-Si TFT circuit design and integration
Keywords :
elemental semiconductors; semiconductor device models; silicon; thermal analysis; thin film circuits; thin film transistors; Si; circuit level models; circuit performance; device characteristics; device level models; effective cooling strategies; electro-thermal coupling effects; self-consistent electro-thermal simulation; self-heating effects; thin-film circuits; thin-film transistors; Analytical models; Circuit optimization; Circuit simulation; Circuit synthesis; Cooling; Coupling circuits; Degradation; Integrated circuit reliability; Performance analysis; Thin film transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306195
