Compact Modeling of Mechanical STI y-Stress Effect

In this paper, we proposed two new MOS compact model parameters (synuO and sypuO) to be added to the mobility parameter uO to model the mechanical shallow trench isolation (STI) y-stress. By using a layout experiment, we show that the STI y-stress causes the hook shaped Idsat versus width curve. We demonstrate that by introducing these new model parameters, we are able to fit the actual data more accurately. The STI y-stress effect is modeled by using the synuO parameter (for NMOS) and sypuO parameter (for PMOS) to control the fit to the hook shaped Idsat curve