Title :
The future of CMOS wireless transceivers
Author :
Abidi, A. ; Rofougaran, A. ; Chang, G. ; Rael, J. ; Chang, J. ; Rofougaran, M. ; Chang, P.
Author_Institution :
Integrated Circuits & Syst. Lab., California Univ., Los Angeles, CA, USA
Abstract :
Building blocks alone do not account for the current interest in CMOS for RF applications. The more compelling reason is the opportunities CMOS affords for large-scale integration. Modern wireless transceivers will increasingly blend digital blocks into conventional analog front-ends for frequency synthesis, adaptivity, multi-mode operation, and sophisticated detection. This raises questions such as how well digital CMOS circuits can co-exist on the same substrate as the radio front-end, or whether there is sufficient on-chip isolation in a low-cost package to guarantee stable operation of a receiver with more than 100 dB of baseband gain, or how the power amplifier modulates the on-chip local oscillator. The future of CMOS transceivers may well depend on satisfactory answers to these questions. This paper presents design techniques to mitigate these problems in a single-chip 900 MHz spread-spectrum transceiver implemented in 1 /spl mu/m CMOS, and measurements of the transceiver to validate their effectiveness.
Keywords :
CMOS integrated circuits; UHF integrated circuits; spread spectrum communication; transceivers; 1 micron; 900 MHz; CMOS wireless transceiver; RF circuit; analog front-end; design; digital building block; large-scale integration; single-chip spread-spectrum transceiver; Baseband; CMOS digital integrated circuits; Circuit synthesis; Frequency synthesizers; Gain; Large scale integration; Packaging; Radio frequency; Receivers; Transceivers;
Conference_Titel :
Solid-State Circuits Conference, 1997. Digest of Technical Papers. 43rd ISSCC., 1997 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3721-2
DOI :
10.1109/ISSCC.1997.585283