Title :
Growth models of copper filling in through silicon via at different current density
Author :
Zhaoyu Wang ; Ping Cheng ; Hong Wang ; Honglei Guo ; Guifu Ding ; Xiaolin Zhao ; Jianhua Li
Author_Institution :
Sci. & Technol. on Micro/Nano Fabrication Lab., Shanghai Jiao Tong Univ., Shanghai, China
Abstract :
This paper compared the filling profile of electroplated Cu in through silicon via (TSV) with different aspect ratio at different current density. The experiment results indicated that bottom-up growth of Cu in TSV was obvious when the current density is 1 mA/cm2 and 3 mA/cm2. When the current density was 6 mA/cm2, the conformal growth of Cu was dominant. When the current density was 12 mA/cm2, the sub-conformal growth of Cu appeared combined with conformal growth.
Keywords :
copper; current density; electroplated coatings; three-dimensional integrated circuits; Cu; aspect ratio; bottom-up growth; copper filling; current density; electroplated copper; filling profile; growth models; through silicon via; Additives; Copper; Current density; Filling; Silicon; Three-dimensional displays; Through-silicon vias; TSV; current density; growth model;
Conference_Titel :
CPMT Symposium Japan (ICSJ), 2013 IEEE 3rd
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-2718-0
DOI :
10.1109/ICSJ.2013.6756084
