Title :
Low phase noise 5 GHz VCOs in 0.13 /spl mu/m SOI and bulk CMOS
Author :
Sanderson, David I. ; Kim, Jonghae ; Wang, Xudong ; Trzcinski, Robert E. ; Plouchart, Jean-Olivier
Author_Institution :
IBM Semicond. Res. & Dev. Center, Hopewell Junction, NY
Abstract :
This paper present 5 GHz LC VCO designs fabricated in 0.13 mum SOI and bulk CMOS process technologies. Technology advantages, considerations, and trade-offs are compared for high performance VCO design. A methodology for designing a low FOM VCO is given. The SOI VCO achieves a phase noise of -131 dBc/Hz at a 1 MHz offset and consumes 6 mW. The bulk VCO has a phase noise of -132 dBc/Hz at a 1 MHz offset and draws 6.2 mW. Both of these VCOs achieve a FOM value of nearly -200 dBc/Hz
Keywords :
CMOS integrated circuits; microwave oscillators; phase noise; silicon-on-insulator; 0.13 micron; 5 GHz; 6.2 mW; LC VCO; SOI CMOS process; bulk CMOS process; low FOM VCO; low phase noise VCO; CMOS technology; Circuit optimization; Copper; Inductors; Phase noise; Q factor; Silicon on insulator technology; Tail; Varactors; Voltage-controlled oscillators;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306313
