DocumentCode :
3471017
Title :
Influence of diffusion on solid-state bonding for micro-bumps at low temperatures
Author :
Ying-Hui Wang ; Suga, Takashi
Author_Institution :
Inst. of Innovation in Int. Eng. Educ., Univ. of Tokyo, Tokyo, Japan
fYear :
2013
fDate :
11-13 Nov. 2013
Firstpage :
1
Lastpage :
4
Abstract :
The influence of diffusion on bonding micro-bumps at low temperatures in solid state was studied. The contamination was detected to act as a barrier layer on diffusion during bonding. The diffusion between Au and Sn occurred even at low temperatures by performing surface activation process before bonding and was effective on improving the bonding quality. The increase of bonding strengths of Au-to-Au micro-bumps were slow followed with bonding time, which appeared a logarithmic rate law. 100% bond yield was achieved and the die shear strength was higher than 10 MPa at low temperatures by performing surface activation process before bonding.
Keywords :
bonding processes; contamination; diffusion; gold; microassembling; tin; Au-Au; Au-Sn-Au; barrier layer; bond yield; bonding quality; bonding strengths; bonding time; contamination; die shear strength; diffusion; solid-state microbump bonding; surface activation process; Bonding; Carbon; Gold; Plasma temperature; Surface contamination; Surface treatment; Tin; diffusion; low temperatures; micro-bumps; solid-state bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
CPMT Symposium Japan (ICSJ), 2013 IEEE 3rd
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-2718-0
Type :
conf
DOI :
10.1109/ICSJ.2013.6756117
Filename :
6756117
Link To Document :
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