10-GHz-Band VCOWith Low Phase-Noise Using 0.18/spl mu/m CMOS Process

Author

Chen, Wu-Nan ; Cheng, Kuo-Hua ; Deng, Jyun-Yi ; Chi-Chung, Wang

Author_Institution

Dept. of Comput. & Commun., SHU-TE Univ., Kaohsiung

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

1583

Lastpage

1585

Abstract

This paper presents a 10-GHz-band LC-tank voltage-controlled-oscillator (VCO) designed for high-frequency and low-phase-noise operation using commercial 0.18-mum CMOS technology. The complementary cross-coupled differential topology is adopted in the design in order to reduce phase-noise. The simulated phase-noise are of -90.1 dBc/Hz and -112 dBc/Hz at 100kHz and 1MHz offset frequency respectively, and the power consumption of the core VCO circuit is 12.56mW from a 1.8V power supply. The figure-of-merit (FoM) value at 10-GHz operation frequency is around 181 dB at the offset frequency of 1MHz

Keywords

CMOS integrated circuits; microwave oscillators; phase noise; voltage-controlled oscillators; 0.18 micron; 1.8 V; 10 GHz; 12.56 mW; CMOS process; LC-tank VCO; complementary cross-coupled differential topology; figure-of-merit; low phase-noise VCO; CMOS process; CMOS technology; Circuit topology; Energy consumption; Frequency; MOS devices; MOSFETs; Phase noise; Voltage; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306318

Filename

4098479