A 3.3GHz-Bandwidth RF Broadband LNA with a gain of 29dB

Author

Kang, Shu-jun ; Liu, Lun-cai ; Yun-xia Ma ; Zhang, Zheng-fan

Author_Institution

Sichuan Inst. of Solid-States Circuits, CETC, Chongqing

fYear

2006

fDate

2006

Firstpage

1586

Lastpage

1588

Abstract

In this paper, the design on an MMIC broadband low-noise amplifier was briefly described in terms of SiGe process technology, circuit structure and parameter optimization, package parasitic effect and external circuit effect. After the LNA was processed, the tested results showed the following. The bandwidth of amplifier was 3.37GHz, the power gain (S₂₁) was 29dB, the reverse isolation (S₁₂) was less than or equal to -39dB, the noise figure (NF) was less than or equal to 2.35dB. When the signal frequency was 1.5GHz, P_1dB was 9.2dBm, and OIP₃ reached 21.8dBm

Keywords

Ge-Si alloys; MMIC amplifiers; bipolar MMIC; low noise amplifiers; wideband amplifiers; 2.35 dB; 29 dB; 3.37 GHz; MMIC broadband low-noise amplifier; RF broadband LNA; SiGe; SiGe process technology; circuit structure; external circuit effect; package parasitic effect; parameter optimization; Bandwidth; Circuit testing; Design optimization; Germanium silicon alloys; Isolation technology; Low-noise amplifiers; MMICs; Packaging; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306319

Filename

4098480