Title :
The impact of stochastic dopant and interconnect distributions on gigascale integration
Author :
Meindl, J.D. ; De, V.K. ; Wills, D.S. ; Eble, J.C. ; Xinghai Tang ; Davis, J.A. ; Austin, B. ; Bhavnagarwala, A.J.
Author_Institution :
Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
Opportunities for GSI are governed by a hierarchy of physical limits whose five levels can be codified as: fundamental, material, device, circuit, and system. This distinctive methodology is extended here by elucidating the impact on GSI of random dopant atom placement in the channel region of a MOSFET and of interconnect distributions in random logic networks in context with projected advances in device and circuit techniques.
Keywords :
MOSFET; doping profiles; integrated circuit interconnections; semiconductor doping; stochastic processes; GSI; MOSFET; gigascale integration; random logic network; stochastic dopant distribution; stochastic interconnect distribution; CMOS logic circuits; CMOS technology; Circuit simulation; Doping profiles; Integrated circuit interconnections; Logic circuits; Logic devices; MOSFET circuits; Stochastic processes; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference, 1997. Digest of Technical Papers. 43rd ISSCC., 1997 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3721-2
DOI :
10.1109/ISSCC.1997.585366
