A 3.1-10.6 GHz ultra-wideband low noise amplifier in 0.35-m SiGE BiCMOS

Author

Hua, Ming-Qing ; Wang, Zhi-Gong ; Wang, Xiao-Xia

Author_Institution

Inst. of RF- & OE-ICs, Southeast Univ., Nanjing

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

1601

Lastpage

1603

Abstract

A 3.1-10.6 GHz ultra wideband (UWB) low noise amplifiers (LNA) was designed in 0.35-mum SiGe BiCMOS technology. The circuit technique of multiple feedback loops was adopted to achieve the matched input terminal impedance and wide bandwidth simultaneously. In the focused band this LNA has a peak gain of 19dB with a ripple of less than 2dB, an input return loss of less than -12dB and a noise figure (NF) of less than 3.5dB. The power consumption is 30mW under a 3.0V supply. Compared with the recently reported CMOS UWB LNA, the simulation results show that this LNA has broader bandwidth, lower NF and simpler input matching network

Keywords

BiCMOS integrated circuits; Ge-Si alloys; III-V semiconductors; low noise amplifiers; ultra wideband technology; 0.35 micron; 19 dB; 3 V; 3.1 to 10.6 GHz; 30 mW; BiCMOS; SiGe; circuit technique; matched input terminal impedance; multiple feedback loops; ultra wideband low noise amplifier; Bandwidth; BiCMOS integrated circuits; Broadband amplifiers; Circuit noise; Germanium silicon alloys; Impedance matching; Low-noise amplifiers; Noise measurement; Silicon germanium; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306324

Filename

4098485