Title :
A Design of CMOS RF T/R Switch
Author :
Han, Lei ; Yang, Tao ; Zhang, Bo
Author_Institution :
Sch. of Microelectron. & Solid -State Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu
Abstract :
This paper describes the design and fabrication of the transmit/receive (T/R) switch for frequency lower than 1GHz application. To increase the isolation, two stage switch is designed. And to optimize the performance of isolation and insertion loss, the effects of gate series resistances (GSR) on insertion loss and switching time are analyzed for the first time. The fabricated chips were tested and the measured isolation from DC (direct current) to 1GHz exhibits 55dB and insertion loss lower than 2.1dB
Keywords :
CMOS integrated circuits; integrated circuit design; semiconductor switches; CMOS RF T/R switch; direct current; gate series resistances; insertion loss; switching time; transmit/receive switch; Current measurement; Electrical resistance measurement; Fabrication; Insertion loss; Performance analysis; Performance loss; Radio frequency; Switches; Testing; Time series analysis;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306325
