Title :
A 1 V CMOS digital circuits with double-gate-driven MOSFET
Author :
Wong, L.S.Y. ; Rigby, G.A.
Author_Institution :
Sch. of Electr. Eng., New South Wales Univ., Sydney, NSW, Australia
Abstract :
The double gate driven MOSFET (DGMOS) described here is built with standard CMOS technology without the use of low V/sub th/ transistors. The body of the MOSFET is dynamically connected to the gate by a capacitor. This adjusts its effective threshold voltage during operation automatically. It offers faster switching speed while having a lower static power dissipation, and is ideal for high-speed low-voltage systems. In conventional CMOS design, the body (or bulk) of the transistor is connected to the appropriate supply rail. In DGMOS, the potential of the body is determined by its operating state. This allows transistors to have a much higher drain current when turned on (effective low V/sub th/) and much lower leakage current when turned off (effective high V/sub th/) compared with the conventional fixed back gate bias configuration. This mode has the potential for high-speed operation and minimum static power dissipation.
Keywords :
MOSFET; 1 V; CMOS digital circuits; double-gate-driven MOSFET; drain current; effective threshold voltage; high-speed operation; leakage current; low-voltage systems; standard CMOS technology; static power dissipation; switching speed; CMOS digital integrated circuits; CMOS technology; Capacitors; Digital circuits; Diodes; Inverters; Leakage current; MOSFET circuits; Power dissipation; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference, 1997. Digest of Technical Papers. 43rd ISSCC., 1997 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3721-2
DOI :
10.1109/ISSCC.1997.585389