Improved performance and reliability of MOSFETs with thin gate oxides grown at high temperature

The effect of gate oxide growth temperature on the quality of MOS devices was studied. The effect of oxidation temperature on the device parameters of as-fabricated MOS capacitors and MOSFETs was investigated. Degradation of MOS capacitors following Fowler-Nordheim electron injection and degradation of MOSFET parameters following channel hot electron stress were studied as a function of gate oxidation temperature. Stress induced interface state generation was identified as the dominant mechanism responsible for the degradation of various MOSFET parameters following stress. Radiation induced MOSFET degradation was studied as a function of gate oxide growth temperature and a different dependence than the electrical stressing was observed. A quantitative model based on various physical processes during oxidation and during stress is discussed to explain the results. Gate oxidation at high temperature is suggested to give MOS devices improved performance and reliability.<>